Electronics

Characteristics, Operation,  & Construction of IGBT

The insulated gate bipolar transistor (IGBT) combines the advantageous features of MOSFET (such as voltage control, fast switching) and BJT (such as low ON-state losses and high OFF-state voltage capability. These devices have near ideal characteristics for high voltage (>100V) and medium frequency (<20 kHz) applications. The IGBT is a three terminal device with emitter …

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Characteristics, Operation & Construction of Power MOSFETs

A power MOSFET is a metal oxide semiconductor field effect transistor. It is a three-terminal, voltage controlled majority carrier device and has a source lead (S), drain lead (D) and gate lead (G) similar to emitter, collector and base of a transistor, respectively. The movement of the majority carriers in a MOSFET is controlled by …

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Characteristics & Operation of Enhancement Type MOSFETs 

Enhancement Type MOSFETs  In this type of MOSFET, channel is formed after applying biasing hence it is named as enhancement type. This MOSFET is smaller in size, economical and provides better performance than depletion MOSFET. Figures 1(a) and (b) depict the cross-sectional view and circuit symbols of n-channel enhancement type MOSFET, respectively. The broken line …

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Characteristics & Operation of Depletion Type MOSFETs 

MOSFET stands for metal oxide semiconductor field effect transistor. It is also called IGFET or insulated gate field effect transistor. It is an integrated circuit (IC) or a semiconductor chip. It is fabricated by VSLI using planar technology. The thickness of SiO2 layer is 1000 to 2000 Ao. The larger input resistance of the MOSFET …

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